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dc.contributor.authorVysochanskii, Yulian-
dc.contributor.authorHorvat, Andrew-
dc.contributor.authorMolnar, Alexander-
dc.contributor.authorNakonechnii, Yuriy-
dc.contributor.authorTisovskii, S. I.-
dc.date.accessioned2024-04-26T10:12:53Z-
dc.date.available2024-04-26T10:12:53Z-
dc.date.issued1996-
dc.identifier.citationCritical behavior in a field for ferroelectrics near the Lifshitz point / Yu. M. Vysochanskii, A. A. Horvat, A. A. Molnar, Yu. S. Nakonechnii, S. I. Tisovskii. // Ferroelectrics. – 1996. – Vol. 183. – PP. 143–150.uk
dc.identifier.urihttps://dspace.uzhnu.edu.ua/jspui/handle/lib/61530-
dc.descriptionAbstract The results of the studies of the influence of a constant electric field, directed along the spontaneous polarization axis, on the temperature behaviour of the dielectric constant of the proper uniaxial ferroelectric Sn2P2S6, bears witness to the proximity of the second-order ferroelectric phase transition (PT) to the tricritical point. They also confirm the dependence of the Lifshitz point coordinates in the mixed S2P2(Se&x)6 crystal phase diagram on the degree of non-equilibrium of the electron subsystem in these semiconductors.uk
dc.description.abstractAbstract The results of the studies of the influence of a constant electric field, directed along the spontaneous polarization axis, on the temperature behaviour of the dielectric constant of the proper uniaxial ferroelectric Sn2P2S6, bears witness to the proximity of the second-order ferroelectric phase transition (PT) to the tricritical point. They also confirm the dependence of the Lifshitz point coordinates in the mixed S2P2(Se&x)6 crystal phase diagram on the degree of non-equilibrium of the electron subsystem in these semiconductors.uk
dc.language.isoenuk
dc.publisherGordon and Breach Science Publishersuk
dc.subjectCritical behavioruk
dc.subjectLifshitz pointuk
dc.subjectFerroelectricsuk
dc.titleCritical behavior in a field for ferroelectrics near the Lifshitz pointuk
dc.typeTextuk
dc.pubTypeСтаттяuk
Appears in Collections:Наукові публікації кафедри фізики напівпровідників

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