Please use this identifier to cite or link to this item:
https://dspace.uzhnu.edu.ua/jspui/handle/lib/39146| Title: | Temperature Dependence of The Optical Absorption Edge of Doped Gallium Arsenide |
| Authors: | Chychura, Ihor Ivanovych Turianytsia, Ivan Ivanovych Chychura, Ivan Ivanovych |
| Keywords: | fiber-optic temperature sensors, Zn doped GaAs crystals, Optical transmission of doped GaAs |
| Issue Date: | 2020 |
| Abstract: | The temperature dependences of the optical absorption edges of Zn doped GaAs semiconductor crystals have been measured from 300 to 560 K. The temperature dependence of the optical absorption in the Urbach edges is adequately reproduced by a Bose-Einstein model. Analysis of experimental results gave us the opportunity to offer an explicit function of two arguments (photon energy and temperature) for the absorption coefficient of doped crystals in the Urbach edge region. |
| Type: | Text Dataset Image |
| Publication type: | Стаття |
| URI: | https://dspace.uzhnu.edu.ua/jspui/handle/lib/39146 |
| ISSN: | 1729-4428 |
| Appears in Collections: | Наукові публікації кафедри приладобудування |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| чичура іг.і. туряниця і.і. чичура ів.і..pdf | 1.59 MB | Adobe PDF | View/Open |
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