Temperature Dependence of The Optical Absorption Edge of Doped Gallium Arsenide

Please use this identifier to cite or link to this item: https://dspace.uzhnu.edu.ua/jspui/handle/lib/39146

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DC Field	Value	Language
dc.contributor.author	Chychura, Ihor Ivanovych	-
dc.contributor.author	Turianytsia, Ivan Ivanovych	-
dc.contributor.author	Chychura, Ivan Ivanovych	-
dc.date.accessioned	2022-02-08T18:00:19Z	-
dc.date.available	2022-02-08T18:00:19Z	-
dc.date.issued	2020	-
dc.identifier.issn	1729-4428	-
dc.identifier.uri	https://dspace.uzhnu.edu.ua/jspui/handle/lib/39146	-
dc.description.abstract	The temperature dependences of the optical absorption edges of Zn doped GaAs semiconductor crystals have been measured from 300 to 560 K. The temperature dependence of the optical absorption in the Urbach edges is adequately reproduced by a Bose-Einstein model. Analysis of experimental results gave us the opportunity to offer an explicit function of two arguments (photon energy and temperature) for the absorption coefficient of doped crystals in the Urbach edge region.	uk
dc.language.iso	en	uk
dc.subject	fiber-optic temperature sensors	uk
dc.subject	Zn doped GaAs crystals	uk
dc.subject	Optical transmission of doped GaAs	uk
dc.title	Temperature Dependence of The Optical Absorption Edge of Doped Gallium Arsenide	uk
dc.type	Text	uk
dc.type	Dataset	uk
dc.type	Image	uk
dc.pubType	Стаття	uk
Appears in Collections:	Наукові публікації кафедри приладобудування

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