Please use this identifier to cite or link to this item:
https://dspace.uzhnu.edu.ua/jspui/handle/lib/61532
Title: | Relaxational change of the phase transition character in ferroelectrics-semiconductor |
Authors: | Molnar, Alexander Vysochanskii, Yulian Horvat, Andrew Nakonechnii, Yuriy |
Keywords: | Relaxational change, ferroelectrics-semiconductor, phase transition |
Issue Date: | 1995 |
Publisher: | Gordon and Breach Science Publishers |
Citation: | Relaxational change of the phase transition character in ferroelectrics-semiconductor / A. A. Molnar, Yu. M. Vysochanskii, A. A. Horvat, Yu. S. Nakonechnii. // Ferroelectrics, – 1995. – Vol. 174, – PP. 41-49. |
Abstract: | The effect of time evolution of second-order ferroelectric phase transition (P'T) which is close to the Lifshitz point and the tricritical point in the phase diagram to the sequential second-order and first-order transitions has been found. As the data on time variations of the temperature dependence of dielectnc constant for Sn2P2S6 ferroelectric-semiconductor show, the crystal exposure at fixed temperature in the paraphase in the vicinity of the second-order PT results in the appearance of an intermediate (incommensurate, hypothetically) state. Sample lighting benefits the formation of such state, whereas a constant electric field directed along the spontaneous polarization axis reduces its temperature range. Experimental data are described qualitatively by mean-field approximation within a framework of a model, that suggests the linear dependence of thermodynamic potential coefficients of the uniaxial proper ferroelectric with a single direction of modulation in the incommensurate phase vs the charge carriers concentration on the trapping level which is varied exponentially with time in the process of system relaxation to the equlibriurn state at fixed temperature. |
Description: | The effect of time evolution of second-order ferroelectric phase transition (P'T) which is close to the Lifshitz point and the tricritical point in the phase diagram to the sequential second-order and first-order transitions has been found. As the data on time variations of the temperature dependence of dielectnc constant for Sn2P2S6 ferroelectric-semiconductor show, the crystal exposure at fixed temperature in the paraphase in the vicinity of the second-order PT results in the appearance of an intermediate (incommensurate, hypothetically) state. Sample lighting benefits the formation of such state, whereas a constant electric field directed along the spontaneous polarization axis reduces its temperature range. Experimental data are described qualitatively by mean-field approximation within a framework of a model, that suggests the linear dependence of thermodynamic potential coefficients of the uniaxial proper ferroelectric with a single direction of modulation in the incommensurate phase vs the charge carriers concentration on the trapping level which is varied exponentially with time in the process of system relaxation to the equlibriurn state at fixed temperature. |
Type: | Text |
Publication type: | Стаття |
URI: | https://dspace.uzhnu.edu.ua/jspui/handle/lib/61532 |
Appears in Collections: | Наукові публікації кафедри фізики напівпровідників |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
1995_Ferroelectrics_Vol.174_pp.41-49 .pdf | article | 5.12 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.