Nanosized levels of the self-organized structures in the non-crystalline semiconductors As–S(Se) system

Abstract

A synergetic model of the transition to a non-crystalline state is proposed, which enables us to investigate the temperature dependence of the microscopic parameters (meansquare displacements, the proportion of atoms in soft atomic configurations, power constants) under the influence of the external control parameter – the cooling velocity. Their analysis has been performed on the basis of experimental researches for noncrystalline semiconductors of the system As–S(Se). It has been shown that formation of self-organized structures in the non-crystalline solids is carried out in accordance with the technological conditions of obtaining as a method of the system self-organization. The dependence of the period and lifetime of self-organized structures on the cooling velocity has been studied. The established value of the period of spatial inhomogeneity Lc ≈ 10…102 Å correlates with the nanosized midlle order in non-crystalline materials of the system As-S(Se) and decreases with increasing the cooling velocity.