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DC Field | Value | Language |
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dc.contributor.author | Староста, Володимир Іванович | - |
dc.contributor.author | Кроутіл, Ян | - |
dc.contributor.author | Бенеш, Людвіг | - |
dc.date.accessioned | 2018-12-22T17:32:43Z | - |
dc.date.available | 2018-12-22T17:32:43Z | - |
dc.date.issued | 1990 | - |
dc.identifier.citation | Starosta V.I., Kroutil J., Benes L. Preparation and Fundamental Physical Properties of Sn2SbS2I3 and Pb2SbS2I3 Сompounds // Сrystal research and technology. Volume25, Issue12 (1990). P. 1439-1442 | uk |
dc.identifier.uri | https://doi.org/10.1002/crat.2170251214 | - |
dc.identifier.uri | https://dspace.uzhnu.edu.ua/jspui/handle/lib/23145 | - |
dc.description.abstract | The oriented ingots of isostructural compounds Sn2SbS2I3 and Pb2SbS2I3 were prepared using a modified Bridgman method. The lattice parameters of the prepared orthorhombic compounds have been determined by a X‐ray powder diffraction analysis. From the spectral response of the photoconductivity the following values for the forbidden zone of the prepared sulfides‐iodides were found: Eg(Sn2SbS2I3) 1.5 eV, Eg(Pb2SbS2I3) = 2.0 eV. | uk |
dc.language.iso | en | uk |
dc.subject | монокристали, фізичні властивості, фотопровідність | uk |
dc.title | Preparation and Fundamental Physical Properties of Sn2SbS2I3 and Pb2SbS2I3 Сompounds | uk |
dc.type | Text | uk |
dc.pubType | Стаття | uk |
Appears in Collections: | Наукові публікації кафедри загальної педагогіки та педагогіки вищої школи |
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Starosta V_ Kroutil J_ Benes L_ Preparation and Fundamental Physical Properties of Sn2SbS2I3 and Pb2SbS2I3 Сompounds Cryst. Res. Technol., 1990. – № 12. – P. 1439-1442..pdf | 141.31 kB | Adobe PDF | View/Open |
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