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https://dspace.uzhnu.edu.ua/jspui/handle/lib/61510Повний запис метаданих
| Поле DC | Значення | Мова |
|---|---|---|
| dc.contributor.author | Vysochanskii, Yulian | - |
| dc.contributor.author | Molnar, Alexander | - |
| dc.contributor.author | Khoma, M.M. | - |
| dc.date.accessioned | 2024-04-26T08:40:32Z | - |
| dc.date.available | 2024-04-26T08:40:32Z | - |
| dc.date.issued | 1999 | - |
| dc.identifier.citation | Influence of defects and conductivity on the Phase Transitions and the domain structure properties in ferroelectric-semiconductors Sn2P2S(Se)6 / Yu. M. Vysochanskii, A. A. Molnar, M. M. Khoma. // Ferroelectrics. – 1999. – Vol. 223. – PP. 19–26. | uk |
| dc.identifier.issn | https://doi.org/10.1080/00150199908260548 | - |
| dc.identifier.uri | https://dspace.uzhnu.edu.ua/jspui/handle/lib/61510 | - |
| dc.description | The intluence oа the static defects and charge carriers on the dielectric permeability temperature anoninlies at the phase transitions (FT) from paraelectric phase to incomniensurnte (1'2) phase and from IC phase to ferroelectric one has been determined for Sn2P2S(Se), crystals. For these crystals with controlled content of impurities the memory effect recording in IC phase was compared with the dielectric output of the domain walls in ferroelectric phase. The experimental data are analyzed in the mean-field approximation. | uk |
| dc.description.abstract | The intluence oа the static defects and charge carriers on the dielectric permeability temperature anoninlies at the phase transitions (FT) from paraelectric phase to incomniensurnte (1'2) phase and from IC phase to ferroelectric one has been determined for Sn2P2S(Se), crystals. For these crystals with controlled content of impurities the memory effect recording in IC phase was compared with the dielectric output of the domain walls in ferroelectric phase. The experimental data are analyzed in the mean-field approximation. | uk |
| dc.language.iso | en | uk |
| dc.publisher | Gordon and Breach Science | uk |
| dc.subject | Ferroelectrics-semiconductors | uk |
| dc.subject | domains | uk |
| dc.subject | incommensurate phase | uk |
| dc.subject | thermal memory | uk |
| dc.title | Influence of defects and conductivity on the Phase Transitions and the domain structure properties in ferroelectric-semiconductors Sn2P2S(Se)6 | uk |
| dc.type | Text | uk |
| dc.pubType | Стаття | uk |
| Розташовується у зібраннях: | Наукові публікації кафедри фізики напівпровідників | |
Файли цього матеріалу:
| Файл | Опис | Розмір | Формат | |
|---|---|---|---|---|
| 1999_Ferroelectrics_223.pdf | article | 351.51 kB | Adobe PDF | Переглянути/Відкрити |
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