Obtaining of FeS2 thin films on glass substrates in gas discharge plasma

Abstract

Among the wide variety of methods for applying films of various materials onto dielectric and metallic surfaces [1], there is currently no universal method that can be singled out; each method has its own specific advantages and disadvantages. The main methods for obtaining homogeneous thin films include thermal deposition of the material, magnetron sputtering, and chemical and electrochemical deposition methods. However, after the films are applied, chemical and thermal treatments are often necessary to improve their adhesion to the substrate, which can lead to uncontrolled changes in their physical properties. Thus, the search for alternative, simpler, and less resource-intensive methods of film deposition remains relevant. The aim of this work was to develop a methodology for depositing thin FeS2 films on dielectric substrates (quartz glass). In our experiments we used a universal gas discharge chamber which consist of quartz tube 15 cm long, vacuum gasket, dielectric flanges, universal high-voltage inputs, Fe electrodes with adjustable interelectrode distance, heating element(optional) and pins for fixation. For sputtering we will use chalcogens located in the interelectrode space. Due the experiments, the voltage on the high-voltage rectifier was up to 5 kV, the average discharge current was up to 1 A, and the frequency of the pumping pulses was up to 10 kHz. Helium was used as a buffer gas, the pressure of which was 30 Torr. Crystalline sulfur was in the gas discharge chamber. The temperature of the mixture during the operation of the installation did not exceed 350 oC.