1. Електронний репозитарій ДВНЗ "УжНУ"

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Results 1-10 of 12 (Search time: 0.002 seconds).
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Issue DateTitleAuthor(s)
1999Dipole ordering and critical behavior of the static and dynamic properties in three-dimensional and layered MM′P2X6 crystals (M, M′–Sn, Cu, In; X–S, Se).Vysochanskii, Yulian; Molnar, Alexander; Stephanovich, V. A.; Cajipe, V. B.; Bourdon, X.
1994-12Relaxation variation of the nature of the phase transition in a ferroelectric semiconductorMolnar, Alexander; Vysochanskii, Yulian; Gorvat, Andrew; Nakonechniy, Yuriy
1995Relaxational change of the phase transition character in ferroelectrics-semiconductorMolnar, Alexander; Vysochanskii, Yulian; Horvat, Andrew; Nakonechnii, Yuriy
1995Phase transition in the vicinity of Lifshitz point in ferroelectrics-semiconductorsVysochanskii, Yulian; Molnar, Alexander; Horvat, Andrew; Nakonechniy, Yuriy
1996Critical behavior in a field for ferroelectrics near the Lifshitz pointVysochanskii, Yulian; Horvat, Andrew; Molnar, Alexander; Nakonechnii, Yuriy; Tisovskii, S. I.
1997Critical phenomena in ferroelectric crystals Sn2P2S6: dielectric investigationMolnar, Alexander; Vysochanskii, Yulian; Horvat, Andrew; Nakonechniy, Yuriy
1997The relaxation phenomenon in proper uniaxial ferroelectric-semiconductor crystals Sn2P2S(Se)6 with incommensurate phaseVysochanskii, Yulian; Molnar, Alexander
1998The mean-field analysis of Sn2P2(SexS1-x)6 thermodynamical properties in the paraelectric, incommensurate and ferroelectric phasesKhoma, M. M.; Molnar, Alexander; Vysochanskii, Yulian
1997The lock-in transition in proper Sn2P2(SexS1-x)6 ferroelectricsVysochanskii, Yulian; Khoma, M. M.; Molnar, Alexander
1999The influence of defects and conductivity on the domain structure properties and the memory effect in ferroelectric-semiconductors Sn2P2Se6Vysochanskii, Yulian; Molnar, Alexander; Khoma, M.M.; Motrja, S.F.

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