Склоутворення в системі Tl2Sе–Ga2Sе3–GeSе2

Abstract

Glass-formation region in the quasi-ternary system Tl2S–Ga2S3–GeS2 was investigated by quenching molten alloys from 1300 K using X-ray phase analysis method. Glassy alloys with a maximum Tl2Se content of 45 mol.% were obtained on the side Tl2Se–GeSe2. A continuous narrow strip of glass formation from 13 to 33 mol.% Ga2Se3 crosses the entire concentration triangle. A gap in the glass formation area is observed on the ray from GeSe2 to the side Tl2Se–Ga2Se3 at 75 mol.% Tl2Se. Up to 10 mol.% Tl2Se could be introduced into glasses at the GeSe2–TlGaSe2 ray. Maximum content of 33 mol.% Ga2Se3 was found in the glasses on the ray from GeSe2 to the side Tl2Se–Ga2Se3 at 25 mol.% Tl2Se.Characteristic thermal parameters and optical absorption spectra of the glasses of the system were investigated. The variations of the bandgap energy were determined.