Absolute Photon Yield from Silicon Surface under Electron and Ion Irradiation

Abstract

The characteristics of the optical radiation accompanying the bombardment of silicon surface by electrons and medium-energy ions have been studied. The continuous radiation observed in this case is related to interband electronic transitions. The characteristic radiation (which is present in both cases), in the case of ion bombardment, is emitted by silicon atoms sputtered in the excited state and scattered helium ions; in the case of electron bombardment, this radiation is emitted by desorbed excited atoms and residual atmosphere molecules, which cover the silicon surface under study.