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DC Field | Value | Language |
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dc.contributor.author | Rubish, V.M. | - |
dc.contributor.author | Holomb, R.M. | - |
dc.contributor.author | Veres, M. | - |
dc.contributor.author | Himics, L. | - |
dc.date.accessioned | 2018-10-26T11:00:16Z | - |
dc.date.available | 2018-10-26T11:00:16Z | - |
dc.date.issued | 2018-10-02 | - |
dc.identifier.citation | Rubish V.M., Holomb R.M., Veres M., Himics L., Gera E.V., Kostyukevich S.O., Makar L.I., Maryan V.M., Mykaylo O.A., Pop M.M., Yasinko T.I. Changes of structure and optical parameters of As40-xSbxS60 amorphons films under laser illumination // VIII Ukrainian scientific conference on physics of semiconductors (USCPS-8), October 2-4, 2018, Uzhhorod, Ukraine, pp. 198-199 (Poster presentation). | uk |
dc.identifier.uri | https://dspace.uzhnu.edu.ua/jspui/handle/lib/21633 | - |
dc.description.abstract | Due to the broad spectrum of photo-induced phenomena, chalcogenide vitreous semiconductors are widely applied as the media for information recording and fabrication of surface relief structures. In the present report we have adduced the results of investigations of the laser illumination and annealing influence on the Raman and transmission spectra and, respectively, on the structure and optical parameters of As40-xSbxS60 (x=0, 0.8, 1.6, 4, 6) amorphous films. | uk |
dc.language.iso | uk | uk |
dc.subject | optical parameters | uk |
dc.subject | amorphons films | uk |
dc.subject | laser illumination | uk |
dc.title | Changes of structure and optical parameters of As40-xSbxS60 amorphons films under laser illumination | uk |
dc.type | Text | uk |
dc.pubType | Стаття | uk |
Appears in Collections: | Наукові публікації кафедри інформаційних управляючих систем та технологій |
Files in This Item:
File | Description | Size | Format | |
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Changes of structure and optical parameters of As40-xSbxS60.pdf | 731.94 kB | Adobe PDF | View/Open |
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