Please use this identifier to cite or link to this item: https://dspace.uzhnu.edu.ua/jspui/handle/lib/21633
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dc.contributor.authorRubish, V.M.-
dc.contributor.authorHolomb, R.M.-
dc.contributor.authorVeres, M.-
dc.contributor.authorHimics, L.-
dc.date.accessioned2018-10-26T11:00:16Z-
dc.date.available2018-10-26T11:00:16Z-
dc.date.issued2018-10-02-
dc.identifier.citationRubish V.M., Holomb R.M., Veres M., Himics L., Gera E.V., Kostyukevich S.O., Makar L.I., Maryan V.M., Mykaylo O.A., Pop M.M., Yasinko T.I. Changes of structure and optical parameters of As40-xSbxS60 amorphons films under laser illumination // VIII Ukrainian scientific conference on physics of semiconductors (USCPS-8), October 2-4, 2018, Uzhhorod, Ukraine, pp. 198-199 (Poster presentation).uk
dc.identifier.urihttps://dspace.uzhnu.edu.ua/jspui/handle/lib/21633-
dc.description.abstractDue to the broad spectrum of photo-induced phenomena, chalcogenide vitreous semiconductors are widely applied as the media for information recording and fabrication of surface relief structures. In the present report we have adduced the results of investigations of the laser illumination and annealing influence on the Raman and transmission spectra and, respectively, on the structure and optical parameters of As40-xSbxS60 (x=0, 0.8, 1.6, 4, 6) amorphous films.uk
dc.language.isoukuk
dc.subjectoptical parametersuk
dc.subjectamorphons filmsuk
dc.subjectlaser illuminationuk
dc.titleChanges of structure and optical parameters of As40-xSbxS60 amorphons films under laser illuminationuk
dc.typeTextuk
dc.pubTypeСтаттяuk
Appears in Collections:Наукові публікації кафедри інформаційних управляючих систем та технологій

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