Spectroscopic Study of the Decomposition of a Chalcopyrite Molecule in an Overstressed Nanosecond Discharge on a Mixture of Nitrogen with СuInSe2 Vapor Compound

Abstract

The characteristics of an overstressed, high-current nanosecond discharge in a nitrogen atmosphere (p = 5.3-202 kPa) between chalcopyrite electrodes (CuInSe2) are presented. As a result of the ecton sputtering mechanism of massive semiconductor electrodes, chalcopyrite vapor enter the plasma and is partially destroyed as a result of interaction with the plasma electrons, and partially deposited on a solid substrate installed near the discharge gap. The main products of the destruction of the chalcopyrite molecule in the plasma are found in excited states of atoms and ions of copper and indium; spectral lines of copper and indium are proposed, promising for real-time monitoring of the deposition of thin films of chalcopyrite by the gas-discharge technique. Thin films of chalcopyrite in an oxygen-free environment were obtained on glass and quartz substrates, which effectively absorb radiation incident on their surface in a wide spectral range of 200-800 nm, which opens up prospects for their use in devices, which work is associated with the photovoltaic effect.