Investigation of Deposition Conditions of Thin Copper Films from Electrode Destruction Products of Overvoltage High-voltage Discharge in High Pressure Argon

Abstract

The characteristics of a high-voltage nanosecond discharge between copper electrodes in argon at pres-sures of 100-150 kPa are given. In the process of microexplosions of inhomogeneities on the working sur-faces of electrodes in a strong electric field, copper vapors were introduced into the discharge gap due to the formation of ectons. This created the preconditions for the synthesis of thin nanostructured copper films of ultrafine copper powder. Copper films were deposited on a dielectric substrate installed near the electrode system. The spatial and electrical characteristics of high-voltage nanosecond discharge at a dis-tance between the electrodes d = 2 mm were studied. The study of radiation spectra of discharge and oscil-lograms of radiation of the most intense spectral lines and bands was carried out, which allowed to estab-lish the main excited products formed in plasma. The results of optimization of the intensity of UV radia-tion of discharge depending on the frequency, magnitude of the charging voltage and interelectrode dis-tance are presented. The time-averaged UV radiation of the point emitter was optimized depending on the supply voltage of the high-voltage modulator and the frequency of discharge pulses. The light transmission spectra of thin copper films synthesized in the experiment were studied.