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DC Field | Value | Language |
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dc.contributor.author | Міца, Олександр Володимирович | - |
dc.contributor.author | Фекешгазі, Іштван Вінсеєвич | - |
dc.contributor.author | Угрін, Олександр Михайлович | - |
dc.date.accessioned | 2015-09-06T14:41:49Z | - |
dc.date.available | 2015-09-06T14:41:49Z | - |
dc.date.issued | 2005-08 | - |
dc.identifier.uri | https://dspace.uzhnu.edu.ua/jspui/handle/lib/4045 | - |
dc.description.abstract | The results of studies by the SIMS and Auger spectroscopy methods of element distribution in a-As2S3 and a-GeS2 films prepared by vacuum evaporation on Si substrates are presented. In a-GeS2 films the extended transition region with dimensions of ~ 30 nm has been observed. The intensity of interference maximum of such slightly inhomogeneous thin films on glassy substrate is higher than the maximum of transmission level of the free glassy substrate. | uk |
dc.language.iso | uk | uk |
dc.subject | SIMS profile | uk |
dc.subject | Chalcogenide films | uk |
dc.subject | Inhomogeneous film | uk |
dc.title | OPTICAL COATINGS BASED ON NON-CRYSTALLINE FILMS WITH TRANSITION SUBSTRATE-FILM LAYERS: SIMS AND AUGER PROFILES | uk |
dc.type | Text | uk |
dc.pubType | Стаття | uk |
Appears in Collections: | Наукові публікації кафедри інформаційних управляючих систем та технологій |
Files in This Item:
File | Description | Size | Format | |
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Mitsa2.pdf | 509.26 kB | Adobe PDF | View/Open |
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