Please use this identifier to cite or link to this item: https://dspace.uzhnu.edu.ua/jspui/handle/lib/55993
Title: Formation of ferroelectric nanostructures in (As2S3)100-x(SbSI)x glassy matrix
Other Titles: Формування сегнетоелектричних наноструктур у (As2S3) 100− x (SbSI) x скляній матриці
Authors: Кайнц, Діана Іванівна
Микайло, Оксана Андріївна
Shpak A.P.
Rubish V. M.
Guranich O.G.
Shtets P.P.
Guranich P.P.
Keywords: Chalcogenide glassesstructurepolar statedielectric propertiesferroelectric glass-ceramic
Issue Date: 14-Nov-2008
Publisher: Taylor & Francis Group
Citation: Ferroelectrics, 2008 -Vol. 371, Iss.- 1,p. 28 – 33
Abstract: The structure and dielectric properties of (As 2 S 3 ) 100 − x (SbSI) x glasses and their transformation during the heat treatment have been investigated. It has been determined that all glassy alloys have a microgeterogeneous structure. It has been shown that anomalies on the temperature dependences of dielectric permittivity ε and tg δ are connected with the transition of glasses into a polar state followed by their crystallization. The crystallization of glasses is accompanied by a sharp increase in dielectric parameters conditioned by the formation of nanocrystalline inclusions in the glassy matrix which have ferroelectric properties. The structure arising in (As 2 S 3 ) 100 − x (SbSI) x (50 < x < 100) glass matrix during its crystallization corresponds to that of crystalline SbSI. The size of crystalline inclusions and dielectric permittivity value of ferroelectric glass-ceramic depend on the heat treatment conditions.
Type: Text
Publication type: Стаття
URI: https://doi.org/10.1080/00150190802385010
https://dspace.uzhnu.edu.ua/jspui/handle/lib/55993
Appears in Collections:Наукові публікації кафедри міського будівництва і господарства

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