Conditions for The Deposition of Selenium Thin Films from the Plasma of an Overvoltaged Nanosecond Discharge

Abstract

This paper presents the characteristics of an overvoltage nanosecond discharge in argon (p(Ar) = 101 kPa) and a distance between Se electrodes of 2 mm. Selenium vapors are introduced into the discharge gap during microexplosions of inhomogeneities on the working surfaces of the electrodes in a strong electric field. This creates conditions for obtaining thin films of selenium, which can be transferred to a solid dielectric substrate located near the discharge. The main excited components of a discharge plasma based on a mixture of argon and selenium were determined. Electron energy distribution functions, mean energies, temperature, electron density in the plasma, specific discharge power losses for the main electronic processes and their rate constants depending on the value of the E/N parameter were calculated by solving the Boltzmann kinetic equation in a vapor-based discharge plasma selenium in argon. Key words: overvoltage nanosecond discharge, argon, selenium, pulse electric power of the discharge, radiation spectrum, numerical modeling, plasma parameters.