Please use this identifier to cite or link to this item: https://dspace.uzhnu.edu.ua/jspui/handle/lib/59532
Title: The strain-induced transitions of the piezoelectric, pyroelectric, and electrocaloric properties of the CuInP2S6 films
Authors: Morozovska, Anna N.
Eliseev, Eugene A.
Yurchenko, Lesya P.
Laguta, Valentyn V.
Liu, Yongtao
Kalinin, Sergei V.
Kholkin, Andrei L.
Vysochanskii, Yulian M.
Височанський, Юліан Миронович
Issue Date: 2023
Citation: Anna N. Morozovska, Eugene A. Eliseev, Lesya P. Yurchenko, Valentyn V. Laguta, Yongtao Liu, Sergei V. Kalinin, Andrei L. Kholkin , Yulian M. Vysochanskii. The strain-induced transitions of the piezoelectric, pyroelectric, and electrocaloric properties of the CuInP2S6 films. AIP Advances, 2023, v. 13, p. 125306-1 – 125306-7.
Abstract: Low-dimensional ferroelectrics, ferrielectrics, and antiferroelectrics are of urgent scientific interest due to their unusual polar, piezoelectric, electrocaloric, and pyroelectric properties. The strain engineering and strain control of the ferroelectric properties of layered two-dimensional van der Waals materials, such as CuInP2(S,Se)6 monolayers, thin films, and nanoflakes, are of fundamental interest and especially promising for their advanced applications in nanoscale nonvolatile memories, energy conversion and storage, nano-coolers, and sensors. Here, we study the polar, piezoelectric, electrocaloric, and pyroelectric properties of thin strained films of a ferrielectric CuInP2S6 covered by semiconducting electrodes and reveal an unusually strong effect of a mismatch strain on these properties. In particular, the sign of the mismatch strain and its magnitude determine the complicated behavior of piezoelectric, electrocaloric, and pyroelectric responses. The strain effect on these properties is opposite, i.e., “anomalous,” in comparison with many other ferroelectric films, for which the out-of-plane remanent polarization, piezoelectric, electrocaloric, and pyroelectric responses increase strongly for tensile strains and decrease or vanish for compressive strains.
Description: doi: 10.1063/5.0178854
Type: Text
Publication type: Стаття
URI: https://dspace.uzhnu.edu.ua/jspui/handle/lib/59532
Appears in Collections:Наукові публікації кафедри фізики напівпровідників

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