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https://dspace.uzhnu.edu.ua/jspui/handle/lib/60109
Title: | Research and Simulation System for Ferroelectric Multibit Memory Cells |
Authors: | Gal, David Ban, Henrietta Gerasimov, Vitaly Haysak, Andriy Molnar, Alexander Tretiakova, Taisiya |
Keywords: | ferroelectric, multibit memory cell, measurement system, dielectric hysteresis loop |
Issue Date: | 7-Sep-2023 |
Publisher: | Dortmund University of Applied Sciences and Arts, Dortmund, Germany |
Citation: | D.Gal, H. Bán, V. Gerasimov, A. Haysak , A. Molnar , T.Tretiakova, Research and Simulation System for Ferroelectric Multibit Memory Cells / David Gal, Henrietta Bán, Vitaly Gerasimov, Andriy Haysak , Alexander Molnar , Taisiya Tretiakova // The 12th IEEE International Conference on Intelligent Data Acquisition and Advanced Computing Systems: Technology and Applications, 7-9 September, 2023, Dortmund, Germany, p.163-168. |
Abstract: | This paper describes an automatedmeasurement system of dielectric hysteresis loops, with the ability to measure the parameters of ferroelectric memory cells, both standard properties such as spontaneous polarization, coercive field, bias voltage, as well as such features as switching speed and cell aging. Software control allows not only to automate of the measurement process but also to simulate of the data obtained in order to compensate for conductivity and parasitic capacitance. With its use, the possibility of creating multi-bit ferroelectric memory cells was discovered, which makes it possible to create information storage subsystems of higher density. |
Description: | This paper describes an automatedmeasurement system of dielectric hysteresis loops, with the ability to measure the parameters of ferroelectric memory cells, both standard properties such as spontaneous polarization, coercive field, bias voltage, as well as such features as switching speed and cell aging. Software control allows not only to automate of the measurement process but also to simulate of the data obtained in order to compensate for conductivity and parasitic capacitance. With its use, the possibility of creating multi-bit ferroelectric memory cells was discovered, which makes it possible to create information storage subsystems of higher density. |
Type: | Text |
Publication type: | Стаття |
URI: | https://dspace.uzhnu.edu.ua/jspui/handle/lib/60109 |
Appears in Collections: | Наукові публікації кафедри фізики напівпровідників |
Files in This Item:
File | Description | Size | Format | |
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2023_IDAACS23_163 (1).pdf | article | 4.03 MB | Adobe PDF | View/Open |
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