MATERIALS FOR OPTICALSENSORS OF X-RAY IRRADIATIONBASED ON (Ga𝑥In1−𝑥)2Se3FILMS

Abstract

Ga𝑥In1−𝑥)2Se3films with0.1≤𝑥≤0.4were deposited by the thermal evaporation tech-nique. As-deposited (Ga𝑥In1−𝑥)2Se3films were irradiated using the wideband radiation of aCu-anode X-ray tube at different exposure times. The spectral dependences of the refractive in-dex and extinction coefficient are measured by the spectral ellipsometry technique. The opticaltransmission spectra of X-ray irradiated (Ga𝑥In1−𝑥)2Se3films are studied for various irradi-ation times. Parameters of the Urbach absorption edge for X-ray-irradiated (Ga𝑥In1−𝑥)2Se3thin films are determined and compared with those of non-irradiated films. The spectral de-pendences of the refractive indices of non-irradiated and X-ray-irradiated (Ga𝑥In1−𝑥)2Se3films are described in the framework of the model developed by Cauchy, Sellmeier, Wem-ple, and DiDomenico, as well as by the optical-refractometric relation. The detailed variationof the parameters of the Wemple–DiDomenico model for non-irradiated and X-ray-irradiated(Ga𝑥In1−𝑥)2Se3films has been analyzed. The perspective of applications of (Ga𝑥In1−𝑥)2Se3films as the materials for optical sensors of X-rays is discussed.