Comparison of sensitivity of Ge(9)As(9)Se(82) and Ge(16)As(24)Se(60) thin films to irradiation with electron beam

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DC Field	Value	Language
dc.contributor.author	Shylenko, O.	-
dc.contributor.author	Bilanych, V.	-
dc.contributor.author	Feher, A.	-
dc.contributor.author	Rizak, V.	-
dc.contributor.author	Komanicky, V.	-
dc.date.accessioned	2018-01-10T13:46:03Z	-
dc.date.available	2018-01-10T13:46:03Z	-
dc.date.issued	2017	-
dc.identifier.citation	Shylenko O., Bilanych V., Feher A., Rizak V., Komanicky V. Comparison of sensitivity of Ge9As9Se82 and Ge16As24Se60 thin films to irradiation with electron beam //8th International Conference on Amorphous and Nanostructured Chalcogenides. Abstract Book/ Sinaia, Romania, July 2-5, 2017, p.37-38.	uk
dc.identifier.uri	https://dspace.uzhnu.edu.ua/jspui/handle/lib/13	-
dc.language.iso	en	uk
dc.relation.ispartofseries	8th International Conference on Amorphous and Nanostructured Chalcogenides. Abstract Book;	-
dc.title	Comparison of sensitivity of Ge(9)As(9)Se(82) and Ge(16)As(24)Se(60) thin films to irradiation with electron beam	uk
dc.type	Text	uk
dc.pubType	Тези до статті	uk
Appears in Collections:	Наукові публікації кафедри прикладної фізики

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