Optical Characteristics of Overstressed Nanosecond Discharge Plasma Between An Electrode of Aluminum And Chalcopyrite (CuInSe2) In Argon, Nitrogen And Atmospheric Pressure Air

Abstract

The optical characteristics and parameters of an overstressed discharge of nanosecond duration between an aluminum electrode and an electrode from chalcopyrite (CuInSe2) in argon, nitrogen, and air at atmospheric pressure are presented. Due to microexplosions of natural inhomogeneities on the working surfaces of electrodes in a strong electric field, both aluminum and ternary chalcopyrite vapors are introduced into the plasma, which creates the prerequisites for the synthesis of thin films of quaternary chalcopyrite (CuAlInSe2) outside the discharge. The pulses of voltage and current across the discharge gap of d = 1 mm and the pulsed energy contribution to the plasma are investigated. The plasma emission spectra were thoroughly studied, which made it possible to establish the main decay products of the chalcopyrite molecule and the energy states of atoms and singly charged ions of aluminum, copper and indium, which are formed in the discharge. Reference spectral lines of atoms and ions of aluminum, copper and indium have been revealed, which can be used to monitor the process of deposition of thin films of quaternary chalcopyrite in real time. The transmission spectra of radiation synthesized in the experiment by thin films, which include aluminum, copper, indium and selenium, which are components of the quaternary chalcopyrite CuAlInSe2, are presented.