Please use this identifier to cite or link to this item: https://dspace.uzhnu.edu.ua/jspui/handle/lib/56004
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dc.contributor.authorКайнц, Діана Іванівна-
dc.contributor.authorGrabar A.A.-
dc.contributor.authorGurzan M.I.-
dc.contributor.authorHorvat A.A.-
dc.date.accessioned2023-11-25T15:46:03Z-
dc.date.available2023-11-25T15:46:03Z-
dc.date.issued2003-08-01-
dc.identifier.citationFerroelectrics. - 2004. - Vol.304. - P.187-191uk
dc.identifier.urihttps://doi.org/10.1080/00150190490456736-
dc.identifier.urihttps://dspace.uzhnu.edu.ua/jspui/handle/lib/56004-
dc.description.abstractWe have investigated the ferroelectric domain structure a Sn2P2S6 (SPS) single crystal using a chemical etching technique. For this purpose new etching compound was elaborated. The results demonstrate that domain pattern of Sn2P2S6 is formed by the both charged and non-charged domain walls. The presence of the charged walls correlates well with previous.uk
dc.language.isoenuk
dc.publisherTaylor & Francis Groupuk
dc.subjectCharged domain wallferro electricsetching tecniqueuk
dc.titleDomain Wall Orientations in Sn2P2S6 Type Ferroelectricsuk
dc.typeTextuk
dc.pubTypeСтаттяuk
Appears in Collections:Наукові публікації кафедри міського будівництва і господарства

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