Please use this identifier to cite or link to this item: https://dspace.uzhnu.edu.ua/jspui/handle/lib/69522
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dc.contributor.authorBilanych, B.V.-
dc.contributor.authorShylenko, O.-
dc.contributor.authorLatyshev, V.M.-
dc.contributor.authorFeher, A.-
dc.contributor.authorBilanych, V.S.-
dc.contributor.authorRizak, V.M.-
dc.contributor.authorKomanicky, V.-
dc.date.accessioned2025-01-18T22:00:36Z-
dc.date.available2025-01-18T22:00:36Z-
dc.date.issued2020-
dc.identifier.citationUkr. J. Phys. 2020. Vol. 65, No. 3, p.247-253uk
dc.identifier.urihttps://dspace.uzhnu.edu.ua/jspui/handle/lib/69522-
dc.description.abstractThe interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9.3 × 103–9.3×107 𝜇C· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As4Se96 film.uk
dc.description.sponsorshipThis work has been supported the grant of the Slovak Research and Development Agency under the contract No. APVV-17-0059. The author Bogdan Bilanych is grateful to a grant of National Scholarship Programme of the Slovak Republic SAIA for the financial help in the realization of this research.uk
dc.language.isoenuk
dc.publisherUkr. J. Phys.uk
dc.subjectelectron-induced surface reliefuk
dc.subjectchalcogenide glass, thin films, As–Se, electron-induced surface relief.uk
dc.titleInteraction of chalcogenide As4Se96 films with electron beam when used them as electronic resistsuk
dc.typeTextuk
dc.pubTypeСтаттяuk
Appears in Collections:Наукові публікації кафедри прикладної фізики і квантової електроніки

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