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https://dspace.uzhnu.edu.ua/jspui/handle/lib/69522| Title: | Interaction of chalcogenide As4Se96 films with electron beam when used them as electronic resists |
| Authors: | Bilanych, B.V. Shylenko, O. Latyshev, V.M. Feher, A. Bilanych, V.S. Rizak, V.M. Komanicky, V. |
| Keywords: | electron-induced surface relief, chalcogenide glass, thin films, As–Se, electron-induced surface relief. |
| Issue Date: | 2020 |
| Publisher: | Ukr. J. Phys. |
| Citation: | Ukr. J. Phys. 2020. Vol. 65, No. 3, p.247-253 |
| Abstract: | The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9.3 × 103–9.3×107 𝜇C· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As4Se96 film. |
| Type: | Text |
| Publication type: | Стаття |
| URI: | https://dspace.uzhnu.edu.ua/jspui/handle/lib/69522 |
| Appears in Collections: | Наукові публікації кафедри прикладної фізики і квантової електроніки |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2020Bilanych_UJP-As4Se96.pdf | 852.78 kB | Adobe PDF | View/Open |
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