CHARACTERISTICS OF PULSED GAS DISCHARGE REACTOR FOR SYNTHESIS THIN FILMS OF TUNGSTEN AND ITS OXIDE

Abstract

The characteristics of an atmospheric pressure plasma-chemical reactor for the synthesis of tungsten and tungsten oxide thin films, which operated using an overvoltage nanosecond discharge (OND) in mixtures of inert gases and air with tungsten vapor, are presented. The discharge was ignited between tungsten electrodes. The formation of tungsten clusters and its oxide in the plasma occurred in the process of introducing tungsten vapor into the discharge gap by the ectonic mechanism. This created the prerequisites for the synthesis of the corresponding thin films (W, WO3), which were deposited on a glass substrate installed near the electrode system.