Please use this identifier to cite or link to this item: https://dspace.uzhnu.edu.ua/jspui/handle/lib/74036
Title: Effect of oxygen doping on the phase transition temperature of CuInP2S6 crystals
Other Titles: Effect of oxygen doping on the phase transition temperature of CuInP2S6 crystals
Authors: Molnar, Alexander
Ban, Henrietta
Gal, David
Keywords: CuInP2S6, OXYGEN DOPING, PHASE TRANSITION
Issue Date: 22-Oct-2024
Publisher: Taras Shevchenko National University of Kyiv
Citation: Molnar A., Gál D., Bán H. Effect of oxygen doping on the phase transition temperature of CuInP2S6 crystals, XX INTERNATIONAL SCIENTIFIC CONFERENCE ELECTRONICS AND APPLIED PHYSICS - APHYS 2024, October, 22-25, 2024, Kyiv, Ukraine, p.95.
Abstract: We found another possibility to increase the phase transition temperature of CuInP2S6 crystals. When studying the temperature dependence of the dielectric permittivity of these crystals enriched with oxygen, we observed an increase in the Curie temperature by 20 degrees (336K). Since oxidation is a standard method in the semiconductor industry, the observed phenomenon can be utilized in designing future devices using CuInP2S6 layered ferroelectrics to increase their temperature range.
Description: Molnar A., Gál D., Bán H. Effect of oxygen doping on the phase transition temperature of CuInP2S6 crystals, XX INTERNATIONAL SCIENTIFIC CONFERENCE ELECTRONICS AND APPLIED PHYSICS - APHYS 2024, October, 22-25, 2024, Kyiv, Ukraine, p.95.
Type: Text
Publication type: Тези до статті
URI: https://dspace.uzhnu.edu.ua/jspui/handle/lib/74036
Appears in Collections:Наукові публікації кафедри фізики напівпровідників

Files in This Item:
File Description SizeFormat 
2024_APHYS_95.pdfThesis219.7 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.