Effect of oxygen doping on the phase transition temperature of CuInP2S6 crystals

Abstract

We found another possibility to increase the phase transition temperature of CuInP2S6 crystals. When studying the temperature dependence of the dielectric permittivity of these crystals enriched with oxygen, we observed an increase in the Curie temperature by 20 degrees (336K). Since oxidation is a standard method in the semiconductor industry, the observed phenomenon can be utilized in designing future devices using CuInP2S6 layered ferroelectrics to increase their temperature range.