Please use this identifier to cite or link to this item: https://dspace.uzhnu.edu.ua/jspui/handle/lib/21633
Title: Changes of structure and optical parameters of As40-xSbxS60 amorphons films under laser illumination
Authors: Rubish, V.M.
Holomb, R.M.
Veres, M.
Himics, L.
Keywords: optical parameters, amorphons films, laser illumination
Issue Date: 2-Oct-2018
Citation: Rubish V.M., Holomb R.M., Veres M., Himics L., Gera E.V., Kostyukevich S.O., Makar L.I., Maryan V.M., Mykaylo O.A., Pop M.M., Yasinko T.I. Changes of structure and optical parameters of As40-xSbxS60 amorphons films under laser illumination // VIII Ukrainian scientific conference on physics of semiconductors (USCPS-8), October 2-4, 2018, Uzhhorod, Ukraine, pp. 198-199 (Poster presentation).
Abstract: Due to the broad spectrum of photo-induced phenomena, chalcogenide vitreous semiconductors are widely applied as the media for information recording and fabrication of surface relief structures. In the present report we have adduced the results of investigations of the laser illumination and annealing influence on the Raman and transmission spectra and, respectively, on the structure and optical parameters of As40-xSbxS60 (x=0, 0.8, 1.6, 4, 6) amorphous films.
Type: Text
Publication type: Стаття
URI: https://dspace.uzhnu.edu.ua/jspui/handle/lib/21633
Appears in Collections:Наукові публікації кафедри інформаційних управляючих систем та технологій

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