Please use this identifier to cite or link to this item:
https://dspace.uzhnu.edu.ua/jspui/handle/lib/56004| Title: | Domain Wall Orientations in Sn2P2S6 Type Ferroelectrics |
| Authors: | Кайнц, Діана Іванівна Grabar A.A. Gurzan M.I. Horvat A.A. |
| Keywords: | Charged domain wallferro electricsetching tecnique |
| Issue Date: | 1-Aug-2003 |
| Publisher: | Taylor & Francis Group |
| Citation: | Ferroelectrics. - 2004. - Vol.304. - P.187-191 |
| Abstract: | We have investigated the ferroelectric domain structure a Sn2P2S6 (SPS) single crystal using a chemical etching technique. For this purpose new etching compound was elaborated. The results demonstrate that domain pattern of Sn2P2S6 is formed by the both charged and non-charged domain walls. The presence of the charged walls correlates well with previous. |
| Type: | Text |
| Publication type: | Стаття |
| URI: | https://doi.org/10.1080/00150190490456736 https://dspace.uzhnu.edu.ua/jspui/handle/lib/56004 |
| Appears in Collections: | Наукові публікації кафедри міського будівництва і господарства |
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